Dose-rate dependence of the stress in Ar⁺ ion-implanted silicon

Abstract

Measurements of Ar⁺ ion-beam-induced sheet stress were carried out on thin p-type (100) Si films using a cantilever sheet stress measurement technique. This technique leads to a sensitivity in stress measurement of the order of 1 × 10⁵ dynes/cm², which is two to three orders more sensitive than previously reported techniques. Measurements were made at doses ranging from 10⁹ to 10¹⁶ cm⁻² at room temperature, using various dose rates. Results show that the compressive stress increase is not linear as the dose increases. The dose corresponding to the peak stress is at 2 × 10¹⁴ cm⁻² for 0.05 μA/cm² implantation current at room temperature. This dose is dependent on the density of ion current, which indicates that the annealing of ion-beam-induced processes play an important role.

Key Words:

• Ion implantation
• silicon
• ion-beam-induced process
• thin film
• sheet stress
• dose-rate