Diode parameter determination as applied to mosfets for radiation effects characterization

Abstract

An experimental study of the drain-substrate junction controlled by gate voltage has been carried out on n-MOSFETs. The experimental procedure to acquire the current-voltage characteristics is described together with a theoretical analysis that leads to extract electrical and structural parameters for a description of carrier transport phenomena. The determination of junction parameters is shown to be a powerful method for the evaluation of radiation degradations of the performances of the devices.

Key Words:

• Radiation effects
• MOSFET
• diode parameters