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Abstract
Se(0.85) Te(0.15) films were prepared by thermal evaporation under vacuum on glass substrate. The optical and electrical properties of as deposited and irradiated Se(0.85) Te(0.15) films with different γ-doses are reported.
The optical constants (absorption coefficient (α), extinction coefficient (k), refractive index (n) and dielectric constants (∊, ∊) of unirradiated and irradiated films were calculated. The value of allowed direct optical energy gap of Se(0.85) Te(0.15) films increased from 1.47 eV. to 1.72 eV. with increasing the γ-doses to 2.5 Mrad. The irradiated films have lower resistivity than those as deposited films (unirradiated). The activation energy (ΔE) increases from 0.72 eV. to 0.86 eV. with increasing γ-doses to 2.5 Mrad.
