Abstract
Amorphization of GaAs by P+ implantation at room temperature with fluences ranging from 2∗1014 to 1∗1015 cm−2 with energies ranging from 40 to 170 keV has been investigated by means of the RBS channelling technique. The critical dose and the critical energy density for amorphization were determined. The results obtained do not confirm the expected model of homogeneous amorphization for ‘light’ P-ion implantation.