Metallic ion implantation by using a MEVVA ion source

Abstract

Metallic ions (Ti, Mo, W, V, Ni, Y, Fe and Al) extracted from a MEVVA source have been implanted up to high doses (>1 × 10¹⁷ cm⁻²) into Al and H13 steel. Because of beam heating, rather low energy ions could penetrate quite deeper in the substrates than predicted, stable intermetallic compounds appear as fine precipitates in the doped region, and hence the retained concentration of implants even exceeds the sputter-limited maximum. Multiply charged beam, enhanced diffusion and chemical reaction give great influences to the concentration distribution of implants. All these features are strongly dependent on the chosen ion-target combination.

Key words:

• Metallic ions
• ion implantation in metals
• high-dose implantation