Abstract
Optical hole burning, a potential technique for spectrally selective recording, was demonstrated in Sm-doped MBE-grown thin films of CaF2/Si(111). The inhomogeneous broadening of the corresponding Sm2+ 5d(T1u) ↞ 4f(7F0, A1g) transition (690 nm) was investigated as a function of substrate temperature and film thickness. The MBE apparatus is briefly described as well as the thin film growth procedure.