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Abstract
The influence of γ-irradiation on the optical and electrical properties of amorphous InSe thin films was investigated. Optical absorption coefficient (α) of amorphous InSe thin films was represented as a function of photon energy (hμ) and the data were used to deduce the value of the optical energy gap (Eg opt), the refractive index (n) and the valence band density of states (gi) of the films. The analysis of the absorption coefficient data revealed the existence of indirect transition with optical energy gap Eg opt = 0.98 eV for as-deposited (unirradiated) amorphous InSe films, which increases to 1.15 eV with increasing the γ-doses to 2.5 Mrad.
It was found that the activation energy ΔE obtained form the temperature dependence of conductivity for unirradiated and irradiated amorphous InSe films increases and the conductivity decreases with increasing γ-doses. Also it was found that the degree of disorder and defects in the amorphous structure changes due to γ-irradiation.