Deep dislocation formation by ion implantation

Abstract

One of the main manifestations of the long-range effects is the creation of dislocations at depths of up to four order of magnitude higher than the ion range. There are two main explanations of deep dislocation formation. The first one is the defect transport toward the sample's depth. The second is the energy transport as elastic wave and subsequent defect formation caused by the wave energy. Both models have some contradictions. Therefore, in this work a new mechanism of deep dislocation creation under ion bombardment is proposed. The energy required for the dislocation formation can be transported in the form of potential energy of the mobile defects. At a free grain boundary this energy transforms into the energy of an elastic wave, which then generates the secondary defects. At a stressed grain boundary the arriving mobile defects increase the stress and enhance the rate of point defect formation. The proposed mechanism is free from contradictions and can explain all peculiarities of dislocation structures created by ion implantation.

Keywords:

• Ions
• Implantation
• Dislocations
• Defects
• Stress
• Potential energy
• Diffusion