Hole self-trapping and recombination in LiBaF₃

I. Tāle Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

H.-J. Fitting Fachbereich Physik, Universität Rostock, D-18051, Rostock, Germany

P. Kūlis Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

V. Ogorodnik Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

U. Rogulis Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

M. Spriņgis Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

V. Tā Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

J. Trokšs Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

ā. Veispā Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063, Riga, Latvia

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Abstract

We investigated the electron paramagnetic resonance (EPR), recombination afterglow and thermostimulated luminescence (TSL) of the X-irradiated LiBaF₃ crystals. After X-irradiation at 80 K, an EPR of the self-trapped hole centre V_K (F⁻ ₂) oriented along the [110] axis is identified. X-irradiation at temperatures below 200 K results in a creation of a long-term temperature-independent afterglow—tunnelling luminescence (TL), with main emission bands at 300, 370 and 430 nm. The short wavelength TL bands are associated with the tunnelling recombination of the electron centre with the V_K centre, with thermal stability estimated to be about 130 K.

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Hole self-trapping and recombination in LiBaF₃