Optical and EPR characterization of point defects in bismuth-doped CdWO₄ crystals

H. J. Murphy Bicron Crystal Products, 6801 Cochran Road, Solon, OH 44139, USA

K. T. Stevens Department of Physics, West Virginia University, P.O. Box 6315, Morgantown, WV 26506, USA

N. Y. Garces Department of Physics, West Virginia University, P.O. Box 6315, Morgantown, WV 26506, USA

M. Moldovan Department of Physics, West Virginia University, P.O. Box 6315, Morgantown, WV 26506, USA

N. C. Giles Department of Physics, West Virginia University, P.O. Box 6315, Morgantown, WV 26506, USA

L. E. Halliburton Department of Physics, West Virginia University, P.O. Box 6315, Morgantown, WV 26506, USA

Abstract

We suggest that the 550-nm “yellow” emission in CdWO₄ is due to Bi³⁺ ions substituting for Cd²⁺ ions. The absorption band corresponding to this emission has a peak near 350 nm. This yellow emission was only observed in crystals that contained bismuth impurities. Electron paramagnetic resonace has identified two new centers in X-ray irradiated bismuth-doped CdWO₄. One center is electron-like and is suggested to be a Bi²⁺ ion located on a Cd²⁺ site. The other center is assigned to a hole trapped on an oxygen ion adjacent to a Nb⁵⁺ ion substituting for a W⁶⁺ ion.

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Optical and EPR characterization of point defects in bismuth-doped CdWO₄ crystals

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Optical and EPR characterization of point defects in bismuth-doped CdWO₄ crystals