New Precursors to Group 13 Nitrides

Abstract

In searching for ideal unimolecular precursors to group 13 nitrides we have begun examining two new classes of molecules having the formulae, R_nM(tet)_3−n (n = 0, 1,2) and Bn₂MN₃ (where M = Al, Ga; tet = 5-phenyl-lH-tetrazole, and Bn= benzyl). These may be anticipated to undergo low-temperature decompositions according to equations 1 and 2, respectively. The absence of carbon bonds to the nitrogen ultimately incorporated into the material, as well as the presence of excess nitrogen are viewed as particularly advantageous. Preliminary results focused on the formation of aluminum nitride are presented herein.

Keywords::

• precursor
• aluminum nitride