Metal Oxide Nanoparticles as Novel Gate Materials for Field-Effect Gas Sensors

ABSTRACT

Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300–400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O₂, H₂, NH₃, CO, NO _x , C₃H₆). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.

Keywords:

• Accumulation region
• Adsorption
• Capacitance-voltage (C-V)
• Depletion region
• Field-effect
• Gas sensors
• Gate material
• High frequency
• High temperature
• Interface
• Metal-insulator-semiconductor (MISIC)
• Nano particles
• Ruthenium oxide
• Silicon carbide
• Transient response