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ABSTRACT
The usefulness of optical diagnostics for the investigation of gas discharges is outlined through the presentation of the application of Laser Induced Fluorescence, Spatially Resolved Optical Emission and Laser Scattering, in PE-CVD of a-Si:H. Spatial profiles of SiH and SiH radicals and particle scattered light are presented in various discharge conditions. Their information content is analyzed and the possibility of correlation with discharge and film characteristics is presented.