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Abstract
Polycrystalline diamond films were obtained on silicon (111) substrates by the microwave plasma-assisted chemical-vapour-deposition (CVD) method from theCH3OH+H2 systems.When CH3OH,CH3COCH3, H2 were used as the source gases.the diamond epitaxial films were obtained on the synthesized single-crystal diamond (100), (110) and (111) substrates too. From the experimental results, we could discover that: CH3OH, CH3COCH3 and other hydrocarbon gases could also be used as suitable source gases for the growth of diamond films.