Analysis of thin PZT films as a function of depth and thickness by GIXS

M. Petit Department of Materials and Nuclear Engineering, Materials Research Science and Engineering Center, University of Maryland, College Park, MD, 20742, USA

V. Nagarajan Department of Materials and Nuclear Engineering, Materials Research Science and Engineering Center, University of Maryland, College Park, MD, 20742, USA

S. Aggarwal Department of Materials and Nuclear Engineering, Materials Research Science and Engineering Center, University of Maryland, College Park, MD, 20742, USA

R. Ramesh Department of Materials and Nuclear Engineering, Materials Research Science and Engineering Center, University of Maryland, College Park, MD, 20742, USA

L. J. Martinez-Miranda Department of Materials and Nuclear Engineering, Materials Research Science and Engineering Center, University of Maryland, College Park, MD, 20742, USA

Abstract

We have performed depth profile studies on PZT films of different thickness. Thin epitaxial films of PbZr_0.2Ti_0.8O₃ have been deposited on mono-crystalline (001) LaAlO₃ substrate by pulsed laser deposition. Grazing incidence X-ray scattering was used to study the films' structure. GIXS technique was used to analyze the in-plane compression of lattice parameters as a function of depth within the films.

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Analysis of thin PZT films as a function of depth and thickness by GIXS

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Analysis of thin PZT films as a function of depth and thickness by GIXS

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