Incorporation of Pb, Ti, and Zr into MOCVD grown PbZr_xTi_1-xO₃ thin films

S. A. Rössinger University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

M. P. Moret University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

S. I. Misat University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

P. R. Hageman University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

H. A. Van der Linden University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

E. Haverkamp University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

W. H. M. Corbeek University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

P. K. Larsen University of Nijmegen, Research Institute of Materials, P.O. Box 9010, 6525 GL, Nijmegen

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Abstract

Metal Organic Chemical Vapour Deposition was used to grow PbTiO₃ and PbZr_xTi_1-xO₃ thin films on Pt/Ti/SiO₂/Si substrates. Incorporation of Pb and Ti into PbTiO₃ was studied as a function of the growth temperature, gas phase composition, and reactor pressure, keeping the other deposition parameters constant. The stoichiometric homogeneity in lateral and in vertical direction was measured on optimised PbTiO₃ and PbZr_xTi_1-xO₃ layers using Inductive Coupled Plasma – Atomic Emission Spectroscopy.

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Incorporation of Pb, Ti, and Zr into MOCVD grown PbZr_xTi_1-xO₃ thin films

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Incorporation of Pb, Ti, and Zr into MOCVD grown PbZrxTi1-xO3 thin films

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Incorporation of Pb, Ti, and Zr into MOCVD grown PbZr_xTi_1-xO₃ thin films