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Integrated Ferroelectrics
An International Journal
Volume 30, 2000 - Issue 1-4
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Original Articles

Oriented growth in PZT thin films

Hongxia Qin National Laboratory of Solid State Microstructure and Physics Department, Nanjing University, Nanjing, 210093, P.R. CHINA
,
Jinsong Zhu National Laboratory of Solid State Microstructure and Physics Department, Nanjing University, Nanjing, 210093, P.R. CHINA
,
Zhiqiang Jin National Laboratory of Solid State Microstructure and Physics Department, Nanjing University, Nanjing, 210093, P.R. CHINA
&
Yening Wang National Laboratory of Solid State Microstructure and Physics Department, Nanjing University, Nanjing, 210093, P.R. CHINA
Pages 175-182 | Received 15 Mar 2000, Published online: 19 Aug 2006
 
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Abstract

Pb1.1(Zr0.7Ti0.3)O3 (PZT) thin films with different preferred orientation were fabricated from different precursor solutions by the sol-gel method on (111)-Pt/Ti/SiO2/Si-(100) substrates. The concentration of acetic acid was found to affect strongly the attribution and distribution of stresses in the films, and then to further affect the crystal orientation of the films. The reproducible microstructure and textures can be obtained by modifying the [Acet]/[Ti] molar ratio. To confirm this stress effect, an external stress was applied to induce the oriented growth of the thin films. The mechanism of the nucleation, growth and orientation of the films is discussed.

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