Abstract
An advanced model of BaxSr1-xTiO3 Chemical Vapor Deposition is proposed. The model implies that metal-organic precursor decomposition occurs primarily at the reactor surfaces. Deposition of various parasitic solid phases (TiO2, BaO, SrO, etc.) is taken into account. The model predicts deposition rate, solid phase composition and fraction of parasitic phases in the grown film as a function of growth parameters.