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Integrated Ferroelectrics
An International Journal
Volume 30, 2000 - Issue 1-4
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Original Articles

YBa2Cu3O7-x/SrTiO3//LaAlO3 heterostructures obtained by injection MOCVD

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Pages 301-308 | Received 10 Apr 2000, Published online: 19 Aug 2006
 

Abstract

YBa2Cu3O7-x /BaxSr1-xTiO3 /LaAlO3 heterostructures can be used as a basis for devices with voltage control in microwave circuits.

BaxSr1-xTiO3 (x=0–0.1) (BST) thin films have been epitaxially grown on LaAlO3 substrates using injection MOCVD. The excellent crystalline quality of the obtained BST films can be proven by a FWHM of <0,2° for the rocking curve of the (002) BST reflection. An AFM study revealed flat surfaces, showing a surface roughness Rs as low as 1nm. YBa2Cu3O7-x/BaxSr1-x TiO3//LaAlO3 heterostructures were than optimised. The YBa2Cu3O7-x (YBCO) layers obtained on BaxSr1-xTiO3 films are epitaxial with a FWHM of 0.45° for the (005) YBCO rocking curve and display very promising superconducting properties of Tc=92K.

Finally the microwave properties of the superconducting films were studied. For YBa2Cu3O7-x layers directly deposited on LaAlO3, surface resistance values of 0,32mΩ were obtained, while for YBa2Cu3O7-x /SrTiO3//LaAlO3 heterostructures, higher values of 1mΩ at 8.5GHz were measured.

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