Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 40, 2001 - Issue 1-5
13
Views
0
CrossRef citations to date
0
Altmetric
Original Articles

A novel cell and array architecture for fet-type Ferroelectric nonvolatile memories

, , , , &
Pages 15-22 | Received 14 Mar 2001, Published online: 19 Aug 2006
 

Abstract

A novel cell using a depletion type Metal-Ferroelectric-Semiconductor FET (MFSFET) as storage device is proposed. Its operations are based on a Metal/Ferroelectric/N-Si/P-Si (MFNP) structure. Read and write disturbance can be avoided in an array of such cells. The basic operations of device have been simulated.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.