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Abstract
The data disturb characteristics of a newly proposed 1T2C-type ferroelectric memory with an array structure were investigated, in which one ferroelectric capacitor Cfa was used for storing data and the other capacitor Cfb was used for reading out the data. It was found that the data disturb problem in write operation was much improved by using a lower write voltage and a compensation pulse. It was also demonstrated that the use of a thicker film in Cfa was a very effective approach for realizing reliable disturb-free read-out operation.