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Abstract
The first MFIS FETs PMOS using Pt/Pb5Ge3O11/ZrO2/n-Si structure has been successfully fabricated. The PGO thin film was deposited by spin on method. Single phase PGO with strong c-axis orientation and low leakage current was obtained on ZrO2 substrate. Pt was used as top electrode and the gate stack was dry etched using chlorine chemistry. Using CMOS compatible process, the integration of MFIS FETs is simple and reliable. ID-VG and ID-VD were characterized on 10 × 10 μrn (L × W) devices. The memory window obtained is about 1.3V with 200nm PGO and 13nm ZrO2. It is also found that memory window is less dependent on device sizes.