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Integrated Ferroelectrics
An International Journal
Volume 40, 2001 - Issue 1-5
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Original Articles

Processing and characterization of LiNbO3 thin film for metal Ferroelectric Semiconductor field effect transistor (MFSFET) application

Xuguang Wang Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA
,
Jie Zhu Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA
,
Hongzhou Zhang Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA
,
Tai-Chou Lee Department of Chemical Engineering, Rice University, Houston, TX 77005, USA
,
Trinh Vo Department of Chemical Engineering, Rice University, Houston, TX 77005, USA
,
Thomas A. Rabson Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA
&
Marc A. Robert Department of Chemical Engineering, Rice University, Houston, TX 77005, USA
 show all
Pages 171-180 | Received 14 Mar 2001, Published online: 19 Aug 2006
 
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Abstract

LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65μC/cm2 was found from sputtering deposited sample.

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