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Integrated Ferroelectrics
An International Journal
Volume 40, 2001 - Issue 1-5
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Original Articles

Study of Bi2TI2O7-based metal-ferroelectric-semiconductor (MFS) FET

Tian-Ling Ren Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
,
Wu-Quan Zhang Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
,
Chun-Xiao Li Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
,
Hong Wang Institute of Crystal Material, Shandong University, Jinan, 250100, P. R. China
,
Li-Tian Liu Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
,
Jun Zhu Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
&
Zhi-Jian Li Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
 show all
Pages 219-224 | Received 14 Mar 2001, Published online: 19 Aug 2006
 
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Abstract

P-channel metal-ferroelectric-semiconductor field-effect-transistors (MFSFET's) and MFS capacitors using Bi2Ti2O7(BTO)/Si(100) structures were fabricated. The film stoichiometry and structure lattice are verified using X-ray energy dispersion analysis (EDAX) and X-ray diffraction (XRD). The C-V and other characteristics the devices showed good hysteresis loops with memory window as large as 4V under ±5V sweeping.

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