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Abstract
Change of device characteristics of the metal-ferroelectric-semiconductor FET (MFSFET) with the progress of fatigue of the ferroelectric thin film are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-VG curves exhibit the accumulation, the depletion and inversion regions clearly. They also exhibit the memory window of 2V. ID-VD curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in ID-VD curve is 6mA/cm2, which decreases as much as 50% after fatigue. Our model is expected to be very useful in the estimation of the behaviour of MFSFET devices with the progress of fatigue.