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Integrated Ferroelectrics
An International Journal
Volume 39, 2001 - Issue 1-4
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Section I: Materials and processing for ferams

Fabrication of Bi3.25La0.75Ti3O12 thin film for FeRAM device using chemical solution deposition method

Chang Jung Kim Microelectronics Lab., Materials and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, 440-600, Korea
,
Insook Yi Microelectronics Lab., Materials and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, 440-600, Korea
,
June Key Lee Microelectronics Lab., Materials and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, 440-600, Korea
&
Youngsoo Park Microelectronics Lab., Materials and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, 440-600, Korea
Pages 91-100 | Received 14 Mar 2001, Published online: 03 Sep 2006
 
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Abstract

Recently, ferroelectric bismuth lanthanum titanate (Bi3.25La0.75Ti3O12) thin film has been expected as a novel material for FRAM device since it has a large polarization, is fatigue free, and can be crystallized at low temperature compared to SrBi2Ta2O9 material. The BLT thin film was fabricated successfully on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600 ∼700°C using rapid thermal process and quartz tube furnace. X-ray diffraction shows a single-phase film. The spontaneous polarization (Ps) and the switching polarization of BLT film annealed at 700°C for 2 min are 16.75 and 26.28 uC/cm2, respectively.

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