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Abstract
Bi3.35La0.75Ti3O12 (BLT) thin (90 nm) film was prepared on a Pt/TiOx/SiO2/Si substrate by metalorganic decomposition (MOD) method, and its microstructure was controlled by rapid thermal annealing (RTA) conditions of temperature and sequence under a fixed furnace annealing (FA) at 650°C. For the conventional RTA before the deposition of Pt top electrode, a random oriented porous film composed of small grains was formed at 500°C, while a strongly c-axis oriented dense film with large grain size was produced at 700°C. The switching polarization (P*−Pˆ) was dependent on both crystalline orientation and grain size, and its highest value of 12 μC/cm2 was obtained at 600°C from the optimized BLT film with weak c-axis orientation and medium grain size. On the other hand, for the modified RTA after top Pt deposition, a random oriented film was formed to have high P*−Pˆ of 12 μC/cm2 irrespective of RTA temperatures of 600 and 700°C.