Deposition and properties of spin on Pb₅Ge₃O₁₁ ferroelectric thin film

Abstract

This paper will discuss the spin on deposition of Pb₅Ge₃O₁₁(PGO) on Ir and ZrO₂ substrates for MFMIS and MFIS FeRAM applications. The precursors used are lead acetate trihydrate and germanium isopropoxide in di (ethylene glycol) ethyl ether. After optimizing the deposition conditions of spin speed, baking condition and annealing condition, single phase c-axis PGO has been obtained on both Ir and ZrO₂ substrates. The film deposited on Ir substrate shows extremely smooth surface and very well saturated square shape hysteresis loop. The 2Pr is about 6∼8 μC/cm2, dielectric constant is about 50∼100, and the leakage current is about 3×10⁻⁶ A/cm2 at 100 kV/cm for 100–120nm thickness PGO thin film. The PGO thin film deposited on ZrO₂ is also very uniform. About 0.7V memory window observed for 180nm PGO thin film with 13nm ZrO₂ high-k gate dielectric at 2V sweep voltage. The leakage current is about 2.5×10⁻⁷ A/cm2 at 100 kV/cm

Key Words:

• Pb₅Ge₃O₁₁
• spin on
• Ir
• ZrO₂
• MFIS
• MFMIS
• FeRAM