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Integrated Ferroelectrics
An International Journal
Volume 39, 2001 - Issue 1-4
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Section J: Materials and processing high frequency devices

Structure, processing, and property relationships in tunable rf and microwave devices

, , , , , & show all
Pages 261-270 | Received 14 Mar 2001, Published online: 03 Sep 2006
 

Abstract

Our work on tunable rf and microwave devices based on 90° off-axis magnetron sputtered Ba0.6Sr0.4TiO3 epitaxial thin films is reviewed. In particular, we have studied the effects of energetic bombardment during deposition on the structural and electrical properties of these films. The fundamental result of changing the energetic bombardment conditions during deposition is to affect the stress/strain state of the films. We show that high bombardment conditions result in films with significantly extended out-of-plane lattice constants and depressed dielectric constants and tunabilities.

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