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Integrated Ferroelectrics
An International Journal
Volume 39, 2001 - Issue 1-4
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Section J: Materials and processing high frequency devices

The influence of synthesis temperature on structure properties of SrTiO3 ferroelectric films

V. E. Loginov St. Petersburg State Electrotechnical University, 5 Prof. Popov str. St., Petersburg, 197376, Russia
,
A. V. Tumarkin St. Petersburg State Electrotechnical University, 5 Prof. Popov str. St., Petersburg, 197376, Russia
,
M. V. Sysa St. Petersburg State Electrotechnical University, 5 Prof. Popov str. St., Petersburg, 197376, Russia
,
O. U. Buslov St. Petersburg State Electrotechnical University, 5 Prof. Popov str. St., Petersburg, 197376, Russia
,
M. M. Gaidukov St. Petersburg State Electrotechnical University, 5 Prof. Popov str. St., Petersburg, 197376, Russia
,
A. I. Ivanov St. Petersburg State Electrotechnical University, 5 Prof. Popov str. St., Petersburg, 197376, Russia
&
A. B. Kozyrev St. Petersburg State Electrotechnical University, 5 Prof. Popov str. St., Petersburg, 197376, Russia
 show all
Pages 375-381 | Received 14 Mar 2001, Published online: 03 Sep 2006
 
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Abstract

The results of structure investigations of SrTiO3 films depending on synthesis temperature are presented and electrical characteristics of 4-electrode planar capacitors based on prepared films are investigated. Finally, the technological conditions of high structure quality SrTiO3 films preparation are determined. SrTiO3 films prepared under these conditions possess electrical characteristics sufficient for room temperature MW applications in a wide frequency range., Keywords: RF magnetron sputtering, SrTiO3

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