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Abstract
Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 μC/cm2 @ 77K and paraelectric at higher temperatures with tanδ@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.