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Integrated Ferroelectrics
An International Journal
Volume 36, 2001 - Issue 1-4
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Original Articles

Improved precursors for the mocvd of sbt, sbn and sbtn

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Pages 111-118 | Received 14 Mar 2001, Published online: 19 Aug 2006
 

Abstract

Liquid injection MOCVD is an attractive technique for the deposition of SrBi2Ta2O9 (SBT), SrBi2Nb2O9 (SBN) and SrBi2(Ta1-xNbx)2O9 (SBTN), but progress has been limited by a lack of suitable precursors. To alleviate the mismatch between the Sr and Ta or Nb precursors, “single-source” precursors such as Sr[Ta(OEt)6]2 and Sr[Nb(OEt)6]2 have been used, but these still have a tendency to dissociate in the vapour phase leading to an excess of the Ta or Sr component in the deposited film. The insertion of a donor functionalised ligand such as dimethylaminoethoxide (dmae) or bis-dmap into the complex leads to a more fully saturated Sr centre and binds the Sr atom more closely to the Ta or Nb atoms. In this paper we describe the development of the new single-source precursors, Sr[Ta(OEt)5(dmae)]2, Sr[Nb(OEt)5(dmae)]2 and Sr[Nb(OEt)5(bis-dmap)]2, and present structural data for each complex.

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