Monte Carlo simulation of ferroelectric polarization switching

Abstract

We present results obtained by using a kinetic Ising model of polarization switching in multi-gain ferroeletric thin films. The system considered is three-dimensional and is composed of NxN grains with each grain sized L₁xL₂xL₃. The next-nearest interaction was considered and grain boundary condition was simulated by changing the intensity of interaction between two dipoles in different grains. The simulation of anti-parallel domain evolution and switching current under various electric fields were performed. The effects of boundary condition and system size on the switching were investigated. Defect in system playing a role of nucleation was also studied.

Key Words:

• ferroelectric thin films
• Monte Carlo
• nucleation