Microstructure and electrical properties of epitaxial SrBi₂Nb₂O₉ And SrBi₂Ta₂O₉ films

Mark A. Zurbuchen Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16803-6602, U.S.A.; On leave at the Institute of Physics, Augsburg University, D-86159, Augsburg, Germany

James Lettieri Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16803-6602, U.S.A.

Stephen K. Streiffer Materials Science Division, Argonne National Laboratory, Argonne, IL, 60439, U.S.A.

Yunfa Jia Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16803-6602, U.S.A.; Qingdao University, People's Republic of China

Marilyn E. Hawley Materals Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, U.S.A.

Xiaoqing Pan Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109-2136, U.S.A.

Altaf H. Carim Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16803-6602, U.S.A.

Darrell G. Schlom Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16803-6602, U.S.A.; On leave at the Institute of Physics, Augsburg University, D-86159, Augsburg, Germany

show all

Abstract

SrBi₂Nb₂O₉ (and in some cases SrBi₂Ta₂O₉) epitaxial thin films were deposited on (001), (110), and (111) SrTiO₃ substrates by pulsed laser deposition (PLD), both with and without epitaxial SrRuO₃ bottom electrodes. Films grow epitaxially with the c-axis inclined by 0°, 45°, and 57° from the substrate surface normal, respectively. Greater tilts of the c-axis into the plane of the substrate surface provide a greater component of the polar axis (the a-axis of the orthorhombic unit cell) perpendicular to the substrate surface, leading to increased remanent polarization (P _r) values. Portions of the same films used for electrical characterization were examined by transmission electron microscopy (TEM). Films have a single c-axis tilt angle and are fully crystalline with no observable second-phase inclusions. All films are observed to have a high density of out-of-phase boundaries (OPBs).

Key Words:

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Microstructure and electrical properties of epitaxial SrBi₂Nb₂O₉ And SrBi₂Ta₂O₉ films

Information for

Open access

Opportunities

Help and information

Microstructure and electrical properties of epitaxial SrBi2Nb2O9 And SrBi2Ta2O9 films

Abstract

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Information for

Open access

Opportunities

Help and information

Keep up to date

Your download is now in progress and you may close this window

Login or register to access this feature

Microstructure and electrical properties of epitaxial SrBi₂Nb₂O₉ And SrBi₂Ta₂O₉ films