Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

Keisuke Saito Philips Analytical Application Laboratory, 2-13-37 Konan, Minatoku, Tokyo, 108-8507, JAPAN

Katsuyuki Ishikawa Department of Innovative and Engineered Materials, Interdisciplinary Graduated School of Science and Engineering, Tokyo Institute of Technology 4259, Nagatsuta-cho, Midori-ku, Yokohama, 226-8502, JAPAN

Atsushi Saiki Research Associate, Tokyo Institute of Technology Ookayama, Meguroku, TOKYO, 152, JAPAN

Isao Yamaji Philips Analytical Application Laboratory, 2-13-37 Konan, Minatoku, Tokyo, 108-8507, JAPAN

Takao Akai Philips Analytical Application Laboratory, 2-13-37 Konan, Minatoku, Tokyo, 108-8507, JAPAN

Hiroshi Funakubo Department of Innovative and Engineered Materials, Interdisciplinary Graduated School of Science and Engineering, Tokyo Institute of Technology 4259, Nagatsuta-cho, Midori-ku, Yokohama, 226-8502, JAPAN

Abstract

Epitaxial SrBi₂Ta₂O₉ (SBT) films were prepared on (001) and (110) SrTiO₃ single crystal substrates by MOCVD. High-resolution X-ray Diffractometer was employed to characterize its crystalline quality and residual strain after the deposition. (001)- and (116)-oriented SBT thin films growth on (001) and (110) STO substrates were ascertained by XRD analysis. The lattice parameters of epitaxial SBT thin films were obtained by X-ray Reciprocal Space Mapping measurements. It was found that the lattice parameters were almost identical with those of bulk crystal in spite of the large lattice mismatch between SBT thin film and STO substrate.

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Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

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Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

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