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Abstract
In order to investigate the dominant charge transport mechanisms of doped SrTiO3 thin films, high temperature measurements were performed under varying oxygen partial pressures. To meet specific demands of SrTiO3 thin films, a common 4-point measuring setup was improved profoundly by full triaxial shielding and the use of a solid state oxygen pump (made of YSZ). This allowed a precise analysis in the temperature range from 700°C to 1000°C and at oxygen partial pressures (pO2) between 10−20 bar and 1 bar. The conduction behavior of (doped) SrTiO3 thin films, as a function of pO2, revealed characteristics that substantially differ from those of bulk ceramics and cannot be explained by point defect chemistry. Additionally, segregation effects have been observed which lead to a restructuring of the film's morphology to a significant extent.
