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Abstract
Pb(Zr,Ti)O 3 (PZT) is a well known ferroelectric material for nonvolatile memory applications. However, interfacial diffusion and reaction are the main issues when PZT films were deposited directly on silicon. One way to overcome this obstacle is to deposit a barrier layer between PZT and Si. In this work, Pt/PbZr 0.53 Ti 0.47 O 3 /LaAlO 3 /Si structure has been fabricated to study the electric properties. PbZr 0.53 Ti 0.47 O 3 films with 300 nm thickness and LaAlO 3 buffer layers with 30 nm thickness were prepared by pulsed laser deposition technique on n-type Si (100) substrates at 650 C and 450 C, respectively. X-ray diffraction shows that polycrystalline PbZr 0.53 Ti 0.47 O 3 film was formed on amorphous LaAlO 3 buffer layer. The Auger electron spectrometer demonstrates that LaAlO 3 buffer layer effectively prevent Si and Ti, Pb interdiffusion between PZT and Si substrates. For the Pt/PbZr 0.53 Ti 0.47 O 3 /LaAlO 3 /Si structure, the current density-voltage measurement showed a typical leakage current density of about 10 m 7 A/cm 2 at 8 V applied voltage. Furthermore, it has been measured that the Pt/PbZr 0.53 Ti 0.47 O 3 /LaAlO 3 /Si heterostructures exhibit ferroelectric switching properties, showing a memory window as large as 2 V under a ramp rate of 200 mV/s at 1 MHz.