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Abstract
Ferroelectric PZT thin films were fabricated by liquid delivery MOCVD using a cocktail source. Novel precursors, Pb(METHD) 2 , Zr(METHD) 4 and Ti(MPD)(METHD) 2 , were used as starting materials. These precursors had close decomposition temperature around 300°C. The cocktail sources prepared by mixing these precursors with ECH were perfectly vaporized above 280°C. They were stable at least for 6 months. Although the films were crystallized into perovskite PZT phase with appropriate composition, undesirable PbPt x alloy was also formed at the interface between bottom Pt electrodes and PZT layer on the following deposition conditions: a substrate temperature of 550°C, a reactor pressure of 3 Torr, a vaporizer temperature of 280°C, a vaporizer pressure of 115 Torr. The polarization properties of the deposited PZT thin films were not sufficient due to the formation of PbPt x layer.