Effect of Zr/Ti Ratio on the Properties of PZT Thin Films Made by MOCVD Using Ultrasonic Nebulization

Abstract

Pb(Zr,Ti)O₃ (PZT) films with various Zr/Ti ratios were fabricated on Pt/MgTi₂O₅/Si substrates by MOCVD using the ultrasonic nebulization and their characteristics were investigated. PZT thin films with various composition deposited at 400°C were annealed in a RTA (Rapid Thermal Annealing) system at 800°C for 30 sec to minimize the loss of the lead and improve electrical properties. The composition ratio of PZT films affected the crystallographic and electrical properties. For the films crystallized by the RTA process, the remanent polarization of PZT film with near MPB (Morphotropic phase boundary) composition was about 15 μC/cm² at ±5 Voltage in P-E hysteresis loops. Leakage-current density of PZT films was about 1.0 × 10⁻⁷ A/cm² and 7.0 × 10⁻⁵ A/cm² at +5 V and −5 V, respectively.

Keywords:

• PZT film
• Zr/Zr+Ti ratio
• MOCVD
• RTA
• MPB