Characterization of BLT Films Formed by Using a Flash-Annealing Process on Pt/(Cr, Ti)N/TiN/Ti Bottom Electrode

Abstract

Ferroelectric Bi_4−xLa_xTi₃O₁₂ (BLT) films were prepared by using a sol-gel method on Pt/(Cr, Ti)N/TiN/Ti bottom electrode. The BLT films crystallized by a flash-annealing (750°C, 30 sec, O₂) were found to show excellent shapes of hysteresis loop in the P-E (polarization vs. field) characteristics. It was also found that the recovery-annealing (600°C, 60 min, O2) after the flash-annealing was exceedingly effective to decrease the leakage current of the films and to keep the ferroelectric property good.

Keywords:

• BLT
• flash-annealing
• recovery-annealing
• (Cr, Ti)N
• FeRAM