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Integrated Ferroelectrics
An International Journal
Volume 52, 2003 - Issue 1
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Original Articles

Miniature Microphone with Silicon-Based Ferroelectric Thin Films

Yi Yang Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
,
Tian-Ling Ren Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
,
Lin-Tao Zhang Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
,
Ning-Xin Zhang Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
,
Xiao-Ming Wu Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
,
Jian-She Liu Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
,
Li-Tian Liu Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
&
Zhi-Jian Li Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
 show all
Pages 229-235 | Published online: 07 Jul 2010
 
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Abstract

A miniature microphone with silicon-based lead zirconate titanate (PZT) thin films has been fabricated and tested. The main structure of the device is composed of Al/Pt/PZT/Pt/Ti/SiO2/Si3N4/SiO2/Si multi-layer diaphragm. The PZT thin films have been prepared using an improved sol-gel method. Optimized fabrication process of the device has been developed, especially, RIE (reactive ion etching) and IBE (ion beam etching) processes have been used to etch the PZT thin film and electrode metal successfully. The sensitivity of microphone is 16 mV/Pa at 1 KHz and 158 mV/Pa at the resonant frequency of 17.3 KHz. The electrical and thermal reliability of the microphone is satisfactory. This miniature microphone can be widely used in hearing aids, mobile phones, and many other applications.

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