Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn_1/3Nb_2/3)O₃ċ0.384PbZrO₃ċ0.376PbTiO₃ Thin Films Crystallized by Hot Isostatic Pressing

MASAFUMI KOBUNE Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Japan, 671-2201

SHINICHI KOJIMA Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Japan, 671-2201

YUSUKE NISHIOKA Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Japan, 671-2201

TETSUO YAZAWA Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Japan, 671-2201

HIRONORI FUJISAWA Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Japan, 671-2201

MASARU SHIMIZU Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Japan, 671-2201

Abstract

Ferroelectric and piezoelectric properties of Pt/0.24Pb(Zn_1/3Nb_2/3)O₃ċ0.384-PbZrO₃ċ0.376PbTiO₃ (PZNZT)/PbTiO₃/Pt capacitors fabricated by crystallizing amorphous PZNZT films under high pressures of 1.0–176.5 MPa using hot isostatic pressing (HIP) are investigated. All of films HIP-treated under high pressure over 17.7 MPa hardly showed the fatigue degradation up to the switching cycles of 3× 10¹⁰. From piezomeasurements using piezoresponse scanning force microscopy, it was found that the sample HIP-treated under 1.8 MPa exhibited the highest saturated piezoelectric coefficient.

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ACKNOWLEDGEMENT

This work was partly supported by the Fundamental Technology Research Promotion Project in '01 from the New Energy and Industrial Technology Development Organization (NEDO) of Japan.

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Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn_1/3Nb_2/3)O₃ċ0.384PbZrO₃ċ0.376PbTiO₃ Thin Films Crystallized by Hot Isostatic Pressing

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Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn1/3Nb2/3)O3ċ0.384PbZrO3ċ0.376PbTiO3 Thin Films Crystallized by Hot Isostatic Pressing

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Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn_1/3Nb_2/3)O₃ċ0.384PbZrO₃ċ0.376PbTiO₃ Thin Films Crystallized by Hot Isostatic Pressing