Abstract
Numerous studies have been carried out on the fabrication of ferroelectric lead titanate (PT) and lead zirconate titanate (PZT) thin films and their applications to pyroelectric sensors [Citation1–3]. Not many efforts have been made to integrate the films with silicon technology. In this article, we report on the growth of lead-zirconium-titanates films doped with niobium (PNZT) by a sol-gel method on platinized Si substrates along with its characteristics for use in infrared sensor applications.
ACKNOWLEDGEMENTS
The partial financial support for this work through NSF Capacity Building grant # 0236425 and US Army SMDC grant # DASG60-03-01-0003 is gratefully acknowledged. The PNZT thin film work at the University of Alabama, Tuscaloosa, is supported by the Federal Aviation Administration (FAA).