Stress Impact in Nd Doped Bi₄Ti₃O₁₂ Thin Films

XIUMEI WU National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing, People's Republic of China, 210093

WEI LI National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing, People's Republic of China, 210093

JUN MA National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing, People's Republic of China, 210093

DONG QIAN National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing, People's Republic of China, 210093

XIAOMEI LU National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing, People's Republic of China, 210093

JINSONG ZHU National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing, People's Republic of China, 210093

Abstract

The variation of ferroelectric properties of Bi-layered ferroelectric thin films, Bi_3.15Nd_0.85Ti₃O₁₂ (BNT), under different applied stress was investigated. In the thin films, the remnant polarization (P _r) increased with tensile stress, while decreased with compressive stress. On the contrary, the coercive field (E _c) decreased with the stress changing from maximum compression to maximum tension. Fatigue behavior of the films was also studied, which was improved under stress compared with zero stress (free state). These observations presented clear evidence that the reorientation of domains took great effect under stress.

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ACKNOWLEDGEMENTS

This work was supported by the National Science Foundation of China (No 90207027, 10021001), the 973 Project of MOST (2002CB613303) of China, and Jiangsu Natural Science Foundation (No. BK 2002410).

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Stress Impact in Nd Doped Bi₄Ti₃O₁₂ Thin Films