Novel (Y,Yb)MnO₃ Thin Films for FeRAM Application

Abstract

(Y,Yb)MnO₃/Y₂O₃/Si structure was constructed using alkoxy-derived precursor solutions. The electrical properties of the Y₂O₃ films were sensitive to deposition condition. The (Y,Yb)MnO₃ thin film were synthesized on Y₂O₃/Si(111) substrates at 750°C in Ar. The quality of Y₂O₃ films crystallized on Si substrates strongly affect the properties of the Pt/(Y,Yb)MnO₃/Y₂O₃/Si. The properties of Pt/(Y,Yb)MnO₃/Y₂O₃/Si structure could be improved by optimizing the Y₂O₃ layer. The counterclockwise C-V hysteresis induced by ferroelectric polarization switching was observed. The leakage current densities for the MFIS structure were about 10^{− 8}∼10^{− 7} A/cm² at an applied voltage of 5 V. The retention time of the Pt/(Y,Yb)MnO₃/Y₂O₃/Si capacitors was over 10⁴ s.

Keywords:

• (Y,Yb)MnO₃ thin film
• ferroelectric non-destructive memory
• chemical solution deposition
• C-V characteristics
• retention property

ACKNOWLEDGMENTS

The authors acknowledge the financial support from the Industrial Science and Technology Frontier (ISTF) Program promoted by METI, Japan.