Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
48
Views
2
CrossRef citations to date
0
Altmetric
Original Articles

Sol-Gel Derived Nd-Substituted Bi4Ti3O12 Thin Film and Its Electrical Properties

, , , , , , & show all
Pages 193-201 | Received 01 May 2004, Accepted 01 May 2004, Published online: 11 Aug 2010
 

Abstract

Effect of neodymium substitution on the ferroelectric properties of Bi4Ti3O12 was investigated using a sol-gel method. We successfully synthesized 10 wt% homogeneous sol-gel solution of Bi3.15Nd0.85Ti3O12 (BNT) with 12% excess bismuth content. BNT thin films were fabricated on the Pt/TiO2/SiO2/Si substrates by spin coating deposition technique. The final film composition of Bi3.15Nd0.85Ti3O12 was obtained by Rutherford backscattering spectroscopy analysis. The 200-nm-thick BNT films have a strong (117) XRD peak with suppressed (00l) peaks due to the substitution of Nd, and the remanent polarization (2Pr) value of Pt/BNT/Pt structure is 48 μ C/cm2 at 7V, which is significantly greater than those of other ferroelectric thin films such as PZT, SBT and BLT.

ACKNOWLEDGEMENT

This work was supported by the collaborative project of System IC 2010.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.