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Integrated Ferroelectrics
An International Journal
Volume 64, 2004 - Issue 1
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Original Articles

Future Emerging New Memory Technologies

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Pages 3-14 | Received 01 May 2004, Accepted 01 Aug 2004, Published online: 11 Aug 2010
 

Abstract

New type of nonvolatile memories like FRAM, PRAM, MRAM which are capable of fast and unlimited write can ideally perform next generation high level mobile functions and are being focused as candidates for next generation mobile memory. Among new memory candidates, MRAM has the fastest speed, FRAM has the lowest power consumption and PRAM has excellent cell scalability. Such unique feature of each new memory candidate will be effectively utilized in next generation mobile electronics where memory function will be very diversified and specified as well as unified. In this paper, new memory technologies will be viewed in respect of current technology status, technical challenges encountered, and the solution for technology barriers.

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