Effects of LaNiO₃ Buffer Layer Thickness on the Ferro- and Piezoelectric Properties of PZT Films

Abstract

Pb(Zr,Ti)O₃ films with MPB composition were prepared onto the LaNiO₃ (LNO) buffer layer deposited by RF magnetron sputtering. The buffer layer with thickness varying from 5–50 nm was deposited to control the texture of PZT film. The orientation of PZT films is found to be influenced by the LNO buffer layer, controlling either causes the texture of PZT films to be randomly oriented or preferentially oriented in (100) texture. The dependence of the electrical properties of PZT films on the thickness of the buffer layer was evaluated using polarization-electric field (P-E) curve, and the piezoelectric property was measured by the pneumatic loading method. The ferroelectric and piezoelectric properties are discussed in conjunction with different preferred orientations.

Keywords:

• LaNiO₃ (LNO)
• PZT
• buffer layer
• orientation
• ferroelectric
• piezoelectric (d ₃₃)

ACKNOWLEDGEMENT

This work was supported by the Brain Korea 21 Project in 2004. The authors deeply appreciate the support.