Ferroelectric Properties and Memory Characteristics of Pb(Zr_0.52 Ti_0.48)O₃ Thin Films Crystallized by Hot Isostatic Pressing

Abstract

Pb(Zr_0.52Ti_0.48)O₃ films with highly uniform c-axis orientation were fabricated on PbTiO₃ (PT)/ Pt(111)/SiO₂/Si(100) substrates by hot isostatic pressing (HIP) from the amorphous state. All the PZT samples HIP-treated 500°C for 1 h under gas pressures of 1.0–2.0 MPa showed the preferred (001) orientation with c-axis orientation, α > 0.80. The relative permittivity tended to decrease gently with increasing HIP pressure, whereas the dielectric loss increased almost linearly in the 1.5–100 MPa. The PZT sample treated at 1.5 MPa had a symmetric and slim hysteresis loop shape with a remanent polarization, P _r = 15 μ C/cm² and coercive field, E _c = 60 kV/cm. Both samples treated at 10 and 100 MPa exhibited almost the fatigue-free behavior that resisted degradation even after 3 × 10¹⁰ cycles.

Keywords:

• PZT
• hot isostatic pressing
• ferroelectricity
• memory characteristic

ACKNOWLEDGMENT

This work was supported, in part, by a Research Grant from Himeji Institute of Technology, which is gratefully acknowledged.