Microfabrication of Piezoelectric MEMS

Abstract

In this paper we present an overview of processes for fabrication of piezoelectric thin film devices using PZT (Pb(Zr_xTi_1−x)O₃) in planar structures. These structures are used in cantilever-like and membrane configurations for sensing and actuation. Elaboration of a compatible wet and dry etching sequence for patterning of PZT, electrodes, SiO₂ and silicon substrate is the key issues. The method for compensation of mechanical stresses to obtain flat, multilayer structures is demonstrated. Definition of membrane thickness and release of the structures are obtained by Deep Reactive Ion Etching of silicon or by surface micromachining. The complete process has been used for fabrication of cantilever arrays, ultrasonic transducers and pressure sensors. Excellent permittivity and transverse piezoelectric coefficient of PZT have been obtained with the final devices.

Keywords:

• Micromachining
• PZT
• plasma etching
• ultrasonic transducers

Acknowledgments

Present address: RF&PIEZOELECTRIC COMPONENTS, Swiss Center of Electronics and Microtechnology, , Switzerland.